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Samsung Starts Mass Production of 9th Generation V-NAND: 1Tb 3D TLC NAND

Anand Tech

Samsung Electronics has started mass production of its 9th generation of V-NAND memory. The first dies based on their latest NAND tech come in a 1 Tb capacity using a triple-level cell (TLC) architecture, with data transfer rates as high as 3.2 Samsung TLC V- NAND Flash Memory 9th Gen V-NAND 8th Gen V-NAND Layers 290?

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Samsung, MemVerge, and H3 Build 2TB CXL Memory Pool

Anand Tech

Samsung, MemVerge, H3 Platform, and XConn have jointly unveiled their 2 TB Pooled CXL Memory System at the Flash Memory Summit. The 2 TB Pooled CXL Memory system is a 2U rack-mountable machine built by H3 with eight 256 GB Samsung CXL memory modules connected using XConn's XC50256 CXL 2.0

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Samsung's Next-Gen 3nm and 4nm Nodes on Track for Mass Production in 2H 2024

Anand Tech

Samsung is set to start making chips using its 2 nd Generation 3nm-class (SF3) manufacturing technology as well as performance-enhanced version of its 4nm-class (SF4X) fabrication process in the second half of next year, the company told its investors this week.

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Samsung Completes Initial GDDR7 Development: First Parts to Reach Up to 32Gbps/pin

Anand Tech

Samsung has announced this evening that they have completed development on their first generation of GDDR7 memory. Samsung’s announcement comes as we’ve been seeing an increase in disclosures and announcements around the next iteration of the widely-used memory technology.

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Samsung Announces First PCIe 5.0 Enterprise SSD: PM1743, Coming In 2022

Anand Tech

Among these are Samsung, who is announcing their first PCIe 5.0 Based around a new, unnamed PCIe controller, Samsung’s latest server SSD is pairing that with the company’s current (sixth) generation V-NAND. At a high level, the PM1743 is the successor to Samsung’s current PM1733 enterprise SSD. Form Factor.

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Solidigm Announces D5-P5336: 64 TB-Class Data Center SSD Sets NVMe Capacity Records

Anand Tech

Advancements in flash technology have come as a boon to data centers. Data centers looking to optimize storage capacity on a per-rack basis are finding these top-tier SSDs to be an economically prudent investment from a TCO perspective. The company has been extremely bullish on QLC SSDs in the data center.

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Micron Kicks Off Production of HBM3E Memory

Anand Tech

Micron has announced it is mass-producing 24 GB 8-Hi HBM3E devices with a data transfer rate of 9.2 Compared to HBM3, HBM3E increases data transfer rate and peak memory bandwidth by a whopping 44%, which is particularly important for bandwidth-hungry processors like Nvidia's H200. GT/s and a peak memory bandwidth of over 1.2

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